Researchers have implemented a new material engineering method to fabricate a laser microdisk in strained Germanium-Tin (GeSn) alloy. They demonstrate for the first time the laser device with a group IV compound, compatible with Silicon, operating with ultra-low threshold and under continuous wave excitation.
Wednesday, March 25, 2020
First ultra-low threshold continuous-wave lasing in Germanium-Tin
Researchers have implemented a new material engineering method to fabricate a laser microdisk in strained Germanium-Tin (GeSn) alloy. They demonstrate for the first time the laser device with a group IV compound, compatible with Silicon, operating with ultra-low threshold and under continuous wave excitation.
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