Researchers present an experimental characterization of a multilevel spin-orbit-torque magnetic random access memory (SOT-MRAM) cell based on a perpendicularly magnetized heterostructure and addressed the initialization-free issue of multilevel storage schemes.
Thursday, June 20, 2019
Current-induced multilevel storage without initialization for high density magnetic memory
Researchers present an experimental characterization of a multilevel spin-orbit-torque magnetic random access memory (SOT-MRAM) cell based on a perpendicularly magnetized heterostructure and addressed the initialization-free issue of multilevel storage schemes.
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