Wednesday, December 7, 2016
Decoding cement's shape at the nanoscale promises greener concrete
Scientists develop 'programmable' cement particles to attain enhanced properties.
Machine learning enables predictive modeling of 2-D materials
Materials scientists have pioneered another important application for machine learning - helping to accelerate the discovery and development of new materials.
Stamping technique creates nanoscale circuits with electronic ink
New stamping technique creates functional features at nanoscale dimensions.
Novel label-free microscopy enables dynamic, high-resolution imaging of cell interactions
The Photonic Crystal Enhanced Microscope (PCEM) is capable of monitoring and quantitatively measuring cell adhesion, a critical process involved cell migration, cell differentiation, cell division, and cell death.
Uncovering the secrets of water and ice as materials
A group of researchers are pursuing a better understanding of water and ice as materials - focusing on the hydrogen ordering of the disordered ice VI phase to its ordered counterpart ice XV.
Magnetic purification of blood 'pulls out' the bacteria
Magnets instead of antibiotics could provide a possible new treatment method for blood infection. This involves the blood of patients being mixed with magnetic iron particles, which bind the bacteria to them after which they are removed from the blood using magnets.
3D solutions to energy savings in silicon power transistors
Researchers demonstrate operation energy-savings in a low price silicon power transistor structure by scaling down in all three dimensions.
Enhanced stability of perovskite solar cells through the development of new additives
Scientists have developed new additives for the hole-transporting layer of perovskite solar cells, which greatly improved cell stability.
World's first vertically stacked gate-all-around Si nanowire CMOS transistors
Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices. These breakthrough results advance the development of GAA nanowire MOSFETs, which promise to succeed FinFETs in future technology nodes.
Record tunneling magnetoresistance for very small perpendicular magnetic tunnel junctions
This world's smallest device enables the establishment of a manufacturing process for high-density spin-transfer-torque magnetic random access memory (STT-MRAM) arrays that meet the requirements of the 10nm and beyond logic node for embedded non-volatile memory applications. It also paves the way for high density stand-alone applications.
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