Researchers came up with a unique method for measuring the electric potential distribution across a ferroelectric capacitor - the device underlying the memory of the future, which would be orders of magnitude faster than the current flash and solid-state drives, withstanding 1 million times as many rewrite cycles.
Tuesday, December 10, 2019
Researchers close in on new nonvolatile memory
Researchers came up with a unique method for measuring the electric potential distribution across a ferroelectric capacitor - the device underlying the memory of the future, which would be orders of magnitude faster than the current flash and solid-state drives, withstanding 1 million times as many rewrite cycles.
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