Friday, April 16, 2021
Oxygen migration enables ferroelectricity on nanoscale
Hafnium-based thin films, with a thickness of only a few nanometres, show an unconventional form of ferroelectricity. This allows the construction of nanometre-sized memories or logic devices.
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Hafnium-based thin films, with a thickness of only a few nanometres, show an unconventional form of ferroelectricity. This allows the construction of nanometre-sized memories or logic devices.
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Post a Comment