Magnetoresistive random access memory (MRAM) is the forerunning candidate for the next generation digital technology. However, manipulating MRAM efficiently and effectively has been challenging. A revolutionary breakthrough generates spin current to switch the pinned magnetic moments at will.
Thursday, September 24, 2020
Scientists take a 'spin' onto magnetoresistive RAM
Magnetoresistive random access memory (MRAM) is the forerunning candidate for the next generation digital technology. However, manipulating MRAM efficiently and effectively has been challenging. A revolutionary breakthrough generates spin current to switch the pinned magnetic moments at will.
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