A four-state magnetic tunnel junction for novel spintronics applications
A novel magnetic tunnel junction which has four resistance states, instead of two states in existing magnetic tunnel junctions, may pave the way to novel spintronics devices, including multi-level magnetic memory.
A novel magnetic tunnel junction which has four resistance states, instead of two states in existing magnetic tunnel junctions, may pave the way to novel spintronics devices, including multi-level magnetic memory.
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