Scientists explore a new material combination that sets the stage for magnetic random access memories, which rely on spin - an intrinsic property of electrons - and could outperform current storage devices. Their breakthrough published in a new study describes a novel strategy to exploit spin-related phenomena in topological materials.
Sunday, December 29, 2019
Paving the way for spintronic RAMs: A deeper look into a powerful spin phenomenon
Scientists explore a new material combination that sets the stage for magnetic random access memories, which rely on spin - an intrinsic property of electrons - and could outperform current storage devices. Their breakthrough published in a new study describes a novel strategy to exploit spin-related phenomena in topological materials.
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